Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C
₁₀
-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.