New methodology for drain current local variability characterization using Y function method

Y function is well known to overcome the influence of source/drain series resistance (Rsd) in MOSFETs. In this work we present a new methodology for drain current local variability characterization using Y function method. Thus, we show that the study of Y function statistical variability permits the extraction of threshold voltage (V
_TH
) and current gain factor (β) local variability without the influence of Rsd values. We also demonstrate a simple drain current local variability model taking into account the influence of Rsd and its variability in strong inversion regime. This new V
_TH
and β extraction method, and drain current variability model were applied with success to advanced FDSOI and Bulk devices with different dimensions.