A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors

In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al
₂
O
₃
, HfO
₂
, TiO
₂
, ZnO, plasma enhanced chemical vapor deposition deposited SiO
₂
, Si
₃
N
₄
, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 μm. Passivated and unpassivated photodetectors compared for their electrical performances.