Analysis of drain current in short channel drain-extended triple gate FinFETs

A short channel drain-extended triple gate fin shaped field effect transistor (finFET) is designed and simulated and its various performance parameters has been analyzed using Sentaurus TCAD tools. Drain-extended triple gate finFET has better hot carrier reliability which results in increased ON current and suppressed OFF current. The maximum ON current of the proposed device is found to be 2.37×10
^-5
A/μm at V
_GS
=0.4 V and maximum OFF current is found to be 1.108×10
^-11
A/μm and hence an excellent ON/OFF ratio is achieved.