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Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology | IEEE Journals & Magazine | IEEE Xplore

Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology


Abstract:

This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical vari...Show More

Abstract:

This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical variability sources random discrete dopants, gate-edge roughness, fi-edge roughness, metal-gate granularity and random interface trapped charges in N/PBTI are considered.
Published in: IEEE Design & Test ( Volume: 30, Issue: 6, December 2013)
Page(s): 18 - 28
Date of Publication: 06 June 2013

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