Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

In this paper we use numerical simulations to evaluate the impact of interface roughness scattering on III-V n-type and Ge p-type Implant-Free Quantum-Well (IFQW) MOSFETs suitable for the 10nm CMOS technology generation. We make use of Monte Carlo transport simulations to capture the non-equilibrium effects and evaluate the impact that the spacer between gate and source/drain regions and interface roughness scattering have on IFQW performance. We show that the quality of interface between the gate stack and channel and the width of the spacer both impact strongly on device performance.