Modelling of reliability of nanoscale MOSFETs within the discrete charge trapping paradigm

A computational simulation study of oxide reliability degradation considering bias temperature instabilities and random telegraph noise in nano-scale transistors is presented. The interplay between statistical variability, induced by random dopant fluctuations, and reliability is discussed in details, within the framework of a discrete charge trapping paradigm. The stochastic behaviour of the key reliability figures of merit is analyzed by means of both static and dynamic oxide degradation simulations.