Model for investigation of Ion/Ioff ratios in short-channel junctionless double gate MOSFETs

We developed a 2D analytical model for junctionless double gate (DG) MOSFETs valid for all regions of device operation. The 2D solution for the potential enables us to predict electrical parameters, such as threshold voltage and subthreshold slope, as well as current and I
_on
/I
_off
ratios fast and accurate. From the results for the ratios we define an optimum point of device operation for different doping concentrations. The Poisson equation and the conformal mapping technique by Schwarz-Christoffel are used to build the model. A comparison of our 2D physics-based model has been done versus 2D TCAD Sentaurus simulation data.