Parameters extraction in SiGe/Si pMOSFETs using split CV technique

A new parameter extraction technique based on split CV is proposed for bulk MOSFETs. To this end, Poisson-Schrodinger simulations are compared to the measured split CV, confirming the validity of the extraction methods. The new methods have been successfully applied to Si and Si
_0.7
Ge
_0.3
/Si pMOS enabling the investigation of the Ge incorporation impact.