A high performance 64Gb MLC NAND flash memory in 20nm CMOS technology

A 64Gb MLC NAND flash memory on 20nm CMOS technology has been developed. 135mm2 chip size is realized by 1-sided All-Bit-Line architecture and 128 cells in a string. 25MB/s program throughput with 2-bit/cell is achieved by reducing BL resistance and pump output loading using new BL control method and multi-split block decoder. This device also supports 400MB/s high speed interface.