Half-MOS Single-Poly EEPROM Cell in Standard CMOS Process

A novel multiple-time programmable (MTP) single-poly EEPROM cell based on a half-MOS device is presented. The proposed cell is fabricated in a standard complementary metal-oxide-semiconductor (CMOS) process without any additional mask or process step. It is based on a novel approach, which provides many advantages with respect to the state-of-the-art standard MTP cells, in terms of area, program/erase performance, and endurance. A test-chip is fabricated in a standard 0.13 μm CMOS process and extensive experimental results are provided.