Time and Frequency Domain Characterization of Transistor Self-Heating

Pulsed
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and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed
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hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.