Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.