High Quality of 0.18μm CMOS 5.2GHz cascode LNA for RFID tag applications

An operation in 1.8V supply voltage single-ended cascode low-noise amplifier (LNA) structure was launched. This designed circuit provided the lower noise figure and matched the suitable LC tank to enhance the central operating frequency as well as the excellent input and output impedance matching incorporated into this LNA circuit. In this simulation, the Agilent ADS (Advanced Design System) simulation software and tsmc 0.18 μm CMOS process parameters were adopted to achieve the low-cost characteristics and high integration to fit the performance of 5.2 GHz LNA design under IEEE 802.11a specification. Due to the precise calculation gaining the good impedance matching, the simulation results showed the forward gain (S₂₁) about 12.96dB, as well as less than -15dB isolation (S₁₂). The input impedance (S₁₁) and the output impedance (S₂₂) also represented good performance. In addition, the minimum noise figure and the signal linearity performance were quite good, so that this LNA circuit was better in the availability and possibility of RFID tags.