Surface potential redistribution in laterally diffused field effect transistors

Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.