A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10
^-17
A ±10% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.