Analysis and comparison of methods for extracting the inductance and capacitance of TSVs

Closed-form expressions and numerical/measurement-based methods for extracting the inductance (L) and capacitance (C) of Through Silicon Vias (TSVs) are analyzed and compared for frequencies up to 40 GHz. The discrepancies between the methods are discussed. The TSVs are designed, fabricated and measured. Good correlation is obtained between L and C values of TSVs extracted from RF measurements and electromagnetic field simulations.