Low-frequency noise and performance of GaN p-n junction photodetectors

We report on low-frequency noise characteristics of visible-blind GaN p-n junction photodetectors. Carrier hopping through defect states in the space charge region, believed to be associated with dislocations, is identified as the main mechanism responsible for the dark conductivity of the photodiodes. The dark current noise has the 1/f character and obeys the Hooge relation with /spl alpha//spl ap/3.