A high stability electrode technology for stacked SrBi/sub 2/Ta/sub 2/O/sub 9/ capacitors applicable to advanced ferroelectric memory

A novel high stability electrode technology with TaSiN as a key ingredient is proposed. Combining it with the reduced pressure annealing for low temperature formation of the SBT film, fabrication of the stacked SBT capacitor on poly Si plug was demonstrated for the first time.