Modeling of ultra-low energy boron implantation in silicon

Monte Carlo simulations of 0.25-2 keV B implantations are shown to agree well with molecular dynamics simulations and SIMS data. The tails of point responses and dopant distributions at mask edges are found to be dominated by <110> channeling and to have only a slight dependence on tilt angle. A 3-D analytical model is proposed which approximates the Monte Carlo distributions well.