Observation of quantum hall effect in Si-MOSFET's by means of conventional and Josephson potentiometer systems

Measurements of the quantized Hall resistance R
H
(i), i = 4, 8, and 12, have been made for silicon metal-oxide semiconductor field-effect transistors under different experimental conditions T = 0.5 to 1.4 K and B = 10.5 to 14 T, using conventional potentiometer and galvanometer systems. These values of R
H
(4) are in agreement with those obtained by means of a preliminary system of Josephson potentiometer and SQUID galvanometer to within a few parts in 10
⁷
.