High frequency SiGe heterostructure devices

Only in recent years have SiGe/Si heterodevices entered the semiconductor world. In particular, the SiGe heterojunction bipolar transistor (SiGe HBT) has demonstrated a record f/sub max/ value of 160 GHz. The SiGe heterojunction field effect transistor (SiGe HFET) is presently catching up in performance with a reported speed of 92 GHz. This paper reviews device and circuit results focusing on cut-off frequencies, delays, noise and power. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components.