1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate

Today, GaN-HEMT technology and Ultra Wide Band (UWB) power amplifiers are clearly identified as a strategic enabling technology for next generation MMICs to be implemented in high performance T/R Modules, Solid State Power Transmitters, Compact Receivers. To allow commercial market entry of GaN technology, a possible solution is represented by GaN-on-Silicon with a Field Plate active devices technology, in order to have a tradeoff between high RF Power performance and low cost. In this paper, a 1-7 GHz Single-Ended Power Amplifier, designed and fabricated with this technology, will be presented. The amplifier was designed by using a CAD oriented broad band matching approach for both input and output networks, and a saturated output power higher than 37 dBm is expected from measured/simulated data. The experimental load-source pull characterization in this frequency bandwidth was carried out together with a bias dependent Scattering parameters measured data.