High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

AlGaN/GaN HEMT was grown on (110)-oriented silicon substrate. These new transistors are fabricated with unrecessed T-shaped 45nm gate length, to simplify the process and are based on a three layer resist. The technology is similar to those used for devices on Si (111) substrate. A transconductance as high as 455mS/mm and a maximum drain-source current saturation of 1.36A.mm
^-1
at V
_GS
=0V are obtained. Current gain transition frequency and maximum frequency oscillation of 63GHz and 106GHz respectively are also measured. These results are very promising for this new line of components.