High-power high-contrast RF MEMS capacitive switch

This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.