A 1.8V wide-band LNA design in 0.18-µm triple-well CMOS

In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-µm triple-well CMOS technology.