Simulation study on FinFET with tri-material gate

In this paper, a novel tri-material gate (TMG) FinFET device is proposed. Using three-dimensional (3-D) device simulator, hot-carrier effects and short-channel effects of TMG FinFET are investigated and compared with that of dual-material gate FinFET and conventional FinFET. Numerical simulation results shows that TMG FinFET exhibits significantly improved performance in terms of surface potential, electric field and carrier velocity distribution.