A Model of the $I_{\bm D} {-} V_{{\bf GS}}$ Characteristics of Normally OFF 4H-SiC Bipolar JFETs

The first analytical model of the transfer characteristics of normally OFF JFETs devices is presented. The model exploits an original description of carrier distributions in the channel as function of gate and drain voltages, which are then used to determine the barrier height and
$I_{D} {-} V_{\rm GS}$
curves for a generic channel geometry and bias condition of the device. The generality of the model is proved by comparisons with numerical simulations of the barrier height and
$I_{D} {-} V_{\rm GS}$
curves of Si and 4H-SiC JFETs, designed using different aspect ratios and doping, and with the measured
$I_{D} {-} V_{\rm GS}$
curves of existing devices.