Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs

High-Mobility n-MOSFET options with Ge and InGaAs channels are of intense interests. As the well-known interfacial trap (D
_it
) problem appears now contained, new challenges are emerging from above the interface. The evidence of oxide border traps (BT) in high-k dielectrics and its effect on the on-state performance of Ge and InGaAs n-MOSFETs are presented in this study through combined trap and transport analyses. The impact of the oxide traps on device frequency response and threshold voltage (V
_th
) stability could challenge the commercial realization of the high mobility channel MOSFET.