Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

We have developed novel real-time methodology to determine intrinsic forming and switching characteristics of HfO
_x
based RRAM. Elimination of parasitics in 50nm × 50nm cross-bar 1T1R devices (C
_p
<; 50fF) integrated on 300mm wafers using fab-friendly TiN electrodes enabled superior control of high and low resistance of a conductive filament (CF). Sub 50fF parasitics also critically enable a pulsed forming method compatible with high volume manufacturing (HVM). A novel assessment of RRAM operation trade-offs is also made. For example, the trade off in set/reset voltage tuning, variability, current and speed is determined. These trade-offs are significant to quantitatively assess intrinsic potential and limitations of HfO
_x
based RRAM for future memory applications.