The matrix field-emission structures based on carbon nanotubes for flat-panel displays

The synthesis of carbon nanotubes (CNTs) in the holes was carried out by TCVD-method with using metal Fe-catalyst. The holes of depth of ∼ 7 µm were obtained in the tripartite structure Si/SiO
2
/Cr by means of conventional photolithography. The matrix period is 25 µm, the area of each square «window» in the layer of Cr is 100 µm
²
. The field-emission current density of 26 µA/cm
²
was registered at applied electric field of 4 − 5 V/µm. Such structures will be used to create matrix cathodes for field-emission displays.