Simulation-based investigation in effects of design parameters on electrical characters for a TSV-bump combination

The silicon industry has witnessed a half-century gallop of electronics. When technologies reached their limits, new technologies are budding out and prolong the unbreakable Moore's Law. This time, Through Silicon Via (TSV) is considered the most promising technology trend in the next decade. In this paper, we study the electrical characters of a TSV-bump combination under the ground-signal-ground configuration. Effects of design parameters, including geometries and material parameters, on systematic electrical characteristics are investigated and concluded in terms of scatter (S) parameters by a 3D electromagnetic solver. To verify the simulated electrical performance, this paper proposes the equivalent electrical model of the GSG configuration consisting of RLCG parasitic elements. Analytical models are assigned to each parasitic component by employing classical equivalent circuit models of different types of transmission lines. Good agreement is achieved on S-parameters between the 3D electromagnetic solver and the proposed lumped circuit model in the frequency range of 0.1-20GHz.