A high isolation series-shunt photoconductive switching circuit

This paper presents a wide band compact high isolation silicon switching circuit, which is based on the series-shunt switch design with three silicon switches made of diced high resistivity silicon wafer placed over a microstrip gap and activated by 808nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz.