Pulse Operation of a Floating-Electrode Memristive Device

A resistive device with a floating electrode is manufactured as a stack of layers Cu/TaO
x
/Pt/TaO
x
/Cu in a crossbar array comprising two single resistive switches antiserially merged at the common inert floating electrode. The device exhibits four states, namely, HRS/HRS, HRS/LRS, LRS/HRS, and LRS/LRS, where HRS and LRS are the high- and low-resistance states of a single switch. During transitions between the states, the lifetime of the LRS/LRS state can be rendered very short. This property lends itself to generation of current/voltage pulses that can be controlled by three independent technology parameters.