Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation

Single crystal Ge layers of different thickness were successfully formed on bulk SiO
₂
by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.