Designing single GaAs nanowire lasers

Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).