Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation

In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.