Improved Charge-Trapping Characteristics of $ \hbox{BaTiO}_{3}$ by Zr Doping for Nonvolatile Memory Applications

The charge-trapping characteristics of BaTiO
₃
film with and without Zr incorporation were investigated based on Al/ Al
₂
O
₃
/BaTiO
₃
/SiO
₂
/Si capacitors. Compared with the device without Zr incorporation, the one with Zr incorporation showed a similar memory window (8.3 V at ±12 V for 1 s), but higher program speed at low gate voltage (3.2 V at 100 μs + 6 V) and better endurance and data retention (charge loss of 6.4% at 150°C for 10
⁴
), due to the Zr-doped BaTiO
₃
exhibiting higher charge-trapping efficiency and higher density of traps with deeper energy levels.