Ultra high-current-gain InxGa1−xSb-based DHBT with compositional graded base

In_xGa_1-xSb-based double heterojunction bipolar transistor (DHBT) with compositional graded base and collector is presented. A numerical device simulator Silvaco's ATLAS is used to analyze the performance of the device. The Gummel plots and simulation analysis demonstrate extremely high DC current gain with uniform characteristic for the wide range of collector current. The magnitude of the current gain is found to about 1300 and it is the highest gain for HBTs/DHBTs as reported so far. Preliminarily we achieved this extremely high gain may be due to energy band engineering using compositional gradient technique in the device structure.