FET twin model

In this paper, we present a simple but elegant idea through which a body-source shorted Field Effect Transistor (FET), either enhancement-type or depletion-type, and having either an n-channel or p-channel, can be replaced by a combination of two FETs of the same kind (twins), so that the i–v characteristics in all regions of FET operation (cut-off, triode and saturation) remain the same; even though none of the two FETs in the twin model enters the triode region.