1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation

We demonstrated a 1.3-μm-range laser with a high characteristic temperature (
T
₀
= 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser. The temperature characteristics were greatly improved by inserting a p-InGaAlAs electron stopper layer. In addition, we realized a high
f
_r
value with a low injection current using a short cavity (
L
= 200 μm) laser operating at a high temperature. The bias current at 10 Gbit/s and 85 °C was only 15 mA. These results show that a laser with a metamorphic buffer on a GaAs substrate is a good candidate as an uncooled light source with low power consumption.