Advanced metal-gate/high-κ CMOS with small EOT and better high field mobility

Continuously down-scaling the operation voltage, saving energy, and maintaining high performance are the major challenge for CMOS device. Small 0.95∼1.4 nm equivalent-oxide thickness (EOT) and 1.4∼2.5X better mobility than universal SiO
2
/Si data are achieved in metal-gate/high-κ/Ge CMOS at 1 MV/cm effective field (E
eff
). These excellent performances were achieved by using interface engineering and novel process, to overcome the poor high-κ/Ge interface reaction, low source-drain dopant activation, and n
⁺
/p ohmic contact. The all-Ge CMOS with measured higher electron and hole mobility has irreplaceable merits of much simpler process, lower cost, and potentially higher yield than the InGaAs-nMOS/Ge-pMOS platform for IC manufacture.