High k/III-V structures: Interfaces, oxides quality and down scaling

In this paper, we present our studies on high k/InGaAs and high k/InSb structures, focusing on the interfaces, oxides qualities as well as down scaling the gate oxide. We indicate the free movement of Fermi level in both kinds of n- and p-InGaAs MOSCAPs. The effect of gases plasma treatments in the improvement of gate oxides as well as high k/InGaAs interface quality is also discussed. For high k/InSb structure, the effect of post deposition annealing temperatures on electrical properties of this structure is presented. Finally, we present our efforts on down scaling the equivalent oxide thickness of these structures into sub-nm size.