Potential and drain current modeling of surrounding gate MOSFET including polysilicon depletion

The potential drop in the polysilicon depletion layer cannot be neglected in the modeling of the nanoscale MOSFET. A continuous potential model and a potential-based drain current model taking into account the polysilicon depletion effect are developed for the fully depleted nanoscale surrounding gate MOSFET. The performance of the derived analytical models are verified with numerical simulation.