The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

In this paper, The Effect of Gate Dielectric Al
₂
O
₃
/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al
₂
O
₃
. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.