Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient

Bottom-gated ZnO-TFTs have been fabricated under different conditions, and the devices' current-voltage properties are reported. The ZnO films are prepared by reactive magnetron sputtering, and then annealed in N
₂
ambient at 300°C for 1hour. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the effect of N
₂
annealing on the samples' physical structures and electrical characteristics. After annealing, the experimental results show that ZnO-TFTs can exhibit excellent electrical properties while V
_g
changes from -10 to 70V, and I
_on
/I
_off
ratio is larger than 10
⁶
and OFF-state current is smaller than 1.2×10
^-10
A as V
_d
=10V.