Ink-jet printed In-Ga-Zn oxide nonvolatile TFT memory utilizing silicon nanocrystals embedded in SiO2 gate dielectric

A nonvolatile memory based on ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistor with bottom gate bottom contact architecture is reported. The memory device contains SiO
2
gate dielectric layer embedded with silicon nanocrystals, which act as charge trapping sites. Memory effects were observed by a clockwise loop in V
gs
-I
d
curves, which is attributed to the charging and discharging of the silicon nanocrystals. The printed IGZO memory exhibits a high (about 1 × 10
³
) on/off ratio.