Crystal growth of the (Ga1−xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals

The phase diagram of the Ga
2
Se
3
-In
2
Se
3
system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ
2
phase with the compositions (Ga
0.6
In
0.4
)
2
Se
3
and (Ga
0.594
In
0.396
Er
0.01
)
2
Se
3
were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga
0.6
In
0.4
)
2
Se
3
(R = 500 MΩ) and (Ga
0.594
In
0.396
Er
0.01
)
2
Se
3
(R = 210 MΩ) was measured.