1W output power from a 10 /spl mu/m aperture 940 nm-laser diode with a RISAS-structure

There is great demand for high power laser diodes with a diffraction limited output for various applications. To overcome the limits of ridge waveguide laser diodes, new structures with a separately adjustable lateral optical and electrical confinement are under investigation. We demonstrate a Real-Index Guided Self Aligned (RlSAS) laser structure with emission at 940 nm realized by a two step epitaxy.