A computationally efficient ion implantation damage model and its application to multiple implant simulations

A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF
2
and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.